FDN8601 Datasheet, ON Semiconductor

* Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 1.2 A
* High Performance Trench Technology for Extremely Low rDS(on.

* Primary DC−DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parame.

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness. Features
* Max rDS(on) = 109 mW at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 mW at VGS =.

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