FDN86265P Description
This P−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
FDN86265P Key Features
- Max rDS(on) = 1.2 W at VGS = -10 V, ID = -0.8 A
- Very Low RDS-on Mid Voltage P-Channel Silicon Technology
- This Product is Optimised for Fast Switching