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FDN8601 - MOSFET

Description

Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switchin

Features

  • General.

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FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 Features General Description „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
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