FDN8601 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
* High performance trench technology fo.

Application

* Primary DC-DC Switch
* Load Switch
* RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise n.

Description

* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mou.

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