FDN86501LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
* Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A

Application

* Primary DC-DC Switch
* Load Switch
* RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise n.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
* Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling.

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