Datasheet Details
| Part number | FDN86246 |
|---|---|
| Manufacturer | onsemi |
| File Size | 313.19 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDN86246 Datasheet
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General Description
This N
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Key Features
- Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A.
- Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A.
- High Performance Trench Technology for Extremely Low rDS(on).
- High Power and Current Handling Capability in a Widely Used Surface Mount Package.
- Fast Switching Speed.
- 100% UIL Tested.
- Pb.
- Free, Halide Free and RoHS Compliant.
