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FDN86246 Datasheet, ON Semiconductor

FDN86246 mosfet equivalent, n-channel mosfet.

FDN86246 Avg. rating / M : 1.0 rating-13

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FDN86246 Datasheet

Features and benefits


* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A
* High Performance Trench Technology for Extremely Low rDS(on.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness. Features
* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 mW at VGS =.

Image gallery

FDN86246 Page 1 FDN86246 Page 2 FDN86246 Page 3

TAGS

FDN86246
N-Channel
MOSFET
ON Semiconductor

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