FDN86246 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A
* High Performance Trench Technology for Extremely Low rDS(on.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
* Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
* Max rDS(on) = 359 mW at VGS =.
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