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FDN86246 ON Semiconductor

FDN86246 N-Channel MOSFET

FDN86246 Avg. rating / M : star-17

datasheet Download

FDN86246 Datasheet

Features and benefits


• Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A
• Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A
• High Performance Trench Technology for Extremely Low rDS(on.

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FDN86246 FDN86246 FDN86246

TAGS
FDN86246
N-Channel
MOSFET
FDN86265P
FDN8601
FDN86501LZ
ON Semiconductor
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