FDN338P mosfet equivalent, p-channel mosfet.
*
–1.6 A,
–20 V RDS(ON) = 115 mW @ VGS =
–4.5 V
RDS(ON) = 155 mW @ VGS =
–2.5 V
* Fast Switching S.
Features
*
–1.6 A,
–20 V RDS(ON) = 115 mW @ VGS =
–4.5 V
RDS(ON) = .
This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
*
–1.6 A,
–20 V RDS(ON) = 115 mW @ VGS =
&.
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