FDN337N mosfet equivalent, n-channel mosfet.
* 2.2 A, 30 V
* RDS(on) = 0.065 W @ VGS = 4.5 V
* RDS(on) = 0.082 W @ VGS = 2.5 V
* Industry Standard Outline SOT−23 Surface Mount Package Using
Proprieta.
in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low i.
SUPERSOTt−3 N−Channel logic level enhancement mode power
field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. Thes.
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