FDN335N N-Channel MOSFET
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1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for ext.
• DC/DC converter
• Load switch
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D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolu.
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