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FDN335N Fairchild Semiconductor

FDN335N N-Channel MOSFET

FDN335N Avg. rating / M : star-18

datasheet Download

FDN335N Datasheet

Features and benefits




• 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for ext.

Application


• DC/DC converter
• Load switch
• D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolu.

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FDN335N FDN335N FDN335N

TAGS
FDN335N
N-Channel
MOSFET
FDN336P
FDN337N
FDN338
Fairchild Semiconductor
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