FDN335N
Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V
- Low gate charge (3.5nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
