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FDN335N Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Overview

FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM.

Key Features

  • 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.