FDN336P ON Semiconductor

• −1.3 A, −20 V ♦ RDS(on) = 0.20 W @ VGS = −4.5 V ♦ RDS(on) = 0.27 W @ VGS = −2.5 V
• Low Gate Charge (3.6 nC Typical)
• High Performance Trench Technology fo.

load switching and power management, battery charging circuits and DC−DC conversion. Features
• −1.3 A, −20 V ♦ RDS.