FDN336P Description
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC−DC conversion.
FDN336P Key Features
- 1.3 A, -20 V
- RDS(on) = 0.20 W @ VGS = -4.5 V
- RDS(on) = 0.27 W @ VGS = -2.5 V
- Low Gate Charge (3.6 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTTM -3 Provides Low RDS(ON) and 30% Higher Power