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FDN336P Datasheet P-Channel MOSFET

Manufacturer: onsemi

General Description

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC−DC conversion.

Overview

MOSFET – Single P-Channel POWERTRENCH) 2.5 V Specified FDN336P.

Key Features

  • 1.3 A,.
  • 20 V.
  • RDS(on) = 0.20 W @ VGS =.
  • 4.5 V.
  • RDS(on) = 0.27 W @ VGS =.
  • 2.5 V.
  • Low Gate Charge (3.6 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).