FDN336P mosfet equivalent, p-channel mosfet.
* −1.3 A, −20 V
* RDS(on) = 0.20 W @ VGS = −4.5 V
* RDS(on) = 0.27 W @ VGS = −2.5 V
* Low Gate Charge (3.6 nC Typical)
* High Performance Trench Techn.
load switching and power management, battery charging circuits and DC−DC conversion.
Features
* −1.3 A, −20 V
*.
This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are.
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