FDN335N - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN335N
Manufacturer	ON Semiconductor
File Size	288.03 KB
Description	N-Channel MOSFET
Datasheet	FDN335N Datasheet
Additional preview pages of the FDN335N datasheet.

Product details

Description

This N Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

1.7 A, 20 V.
RDS(ON) = 0.07 W @ VGS = 4.5 V.
RDS(ON) = 0.1 W @ VGS = 2.5 V.
Low Gate Charge (3.5 nC typical).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Dec 25, 2023 |