FDN335N Datasheet N-Channel MOSFET

Manufacturer: onsemi

FDN335N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN335N
Manufacturer	onsemi
File Size	288.03 KB
Description	N-Channel MOSFET
Download	FDN335N Download (PDF)

General Description

This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

Overview

MOSFET – N-Channel, 2.5 V Specified, POWERTRENCH) 20 V, 1.7 A, 100 mW FDN335N.

Key Features

1.7 A, 20 V.
RDS(ON) = 0.07 W @ VGS = 4.5 V.
RDS(ON) = 0.1 W @ VGS = 2.5 V.
Low Gate Charge (3.5 nC typical).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
This Device is Pb.
Free and is RoHS Compliant.

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