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FDN335N Datasheet, ON Semiconductor

FDN335N mosfet equivalent, n-channel mosfet.

FDN335N Avg. rating / M : 1.0 rating-11

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FDN335N Datasheet

Features and benefits


* 1.7 A, 20 V
* RDS(ON) = 0.07 W @ VGS = 4.5 V
* RDS(ON) = 0.1 W @ VGS = 2.5 V
* Low Gate Charge (3.5 nC typical)
* High Performance Trench Technology.

Application


* DC−DC Converter
* Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter.

Description

This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features
* 1.7.

Image gallery

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TAGS

FDN335N
N-Channel
MOSFET
FDN336P
FDN337N
FDN338
ON Semiconductor

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