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FDMT80060DC Datasheet, ON Semiconductor

FDMT80060DC mosfet equivalent, n-channel power mosfet.

FDMT80060DC Avg. rating / M : 1.0 rating-15

datasheet Download (Size : 520.45KB)

FDMT80060DC Datasheet

Features and benefits


* Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon Combination for Low rDS(on) and .

Application


* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion DATA SHEET www.onsemi.com VDS 6.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extreme.

Image gallery

FDMT80060DC Page 1 FDMT80060DC Page 2 FDMT80060DC Page 3

TAGS

FDMT80060DC
N-Channel
Power
MOSFET
ON Semiconductor

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