FDMT80060DC mosfet equivalent, n-channel power mosfet.
* Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon Combination for Low rDS(on)
and .
* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion
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VDS 6.
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