FDMT800100DC mosfet equivalent, mosfet.
* Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on)
an.
* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.
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