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FDMT800152DC - N-Channel MOSFET

Description

This N

POWERTRENCH process.

to Ambient

Features

  • Max RDS(on) = 9.0 mW at VGS = 10 V, ID = 13 A.
  • Max RDS(on) = 11.5 mW at VGS = 6 V, ID = 11 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • Low Profile 8 x 8 mm MLP Package.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH), DUAL COOL) 88 150 V, 72 A, 9.0 mW FDMT800152DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max RDS(on) = 9.0 mW at VGS = 10 V, ID = 13 A • Max RDS(on) = 11.
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