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FDMT800120DC Datasheet, ON Semiconductor

FDMT800120DC mosfet equivalent, n-channel mosfet.

FDMT800120DC Avg. rating / M : 1.0 rating-11

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FDMT800120DC Datasheet

Features and benefits


* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A
* Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A
* Advanced Package and Silicon Combination for Low rDS(on) and .

Application


* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion VDS 120 V RDS(on) MAX 4.2 mW @ .

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extreme.

Image gallery

FDMT800120DC Page 1 FDMT800120DC Page 2 FDMT800120DC Page 3

TAGS

FDMT800120DC
N-Channel
MOSFET
ON Semiconductor

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