FDMT800100DC - N-Channel MOSFET

ON Semiconductor

FDMT800100DC Datasheet Preview — Preview of FDMT800100DC PDF

Datasheet Details

Part number	FDMT800100DC
Manufacturer	ON Semiconductor ↗
File Size	512.99 KB
Description	N-Channel MOSFET
Datasheet	FDMT800100DC-ONSemiconductor.pdf

FDMT800100DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance.

Features

Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A.
Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A.
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
Low Profile 8 x 8 mm MLP Package.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant Typical.

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Published: Feb 5, 2023 |