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FDMT800100DC - N-Channel MOSFET

Description

This N

POWERTRENCH process.

to Ambient

Features

  • Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A.
  • Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • Low Profile 8 x 8 mm MLP Package.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant Typical.

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Full PDF Text Transcription

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MOSFET - N-Channel, DUAL COOL) 88, POWERTRENCH) 100 V, 162 A, 2.95 mW FDMT800100DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A • Max rDS(on) = 4.
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