General Description
* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combinati.

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectificati.

* Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineer.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts