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FDMD8630 - N-Channel MOSFET

Description

This package integrates two N Channel devices connected internally in common

source configuration.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Provides a very small footprint (5 x 6 mm) for higher power density.

Features

  • Common Source Configuration to Eliminate PCB Routing.
  • Large Source Pad on Bottom of Package for Enhanced Thermals.
  • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A.
  • Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMD8630
Manufacturer onsemi
File Size 411.09 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMD8630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMD8630 MOSFET – N-Channel, POWERTRENCH), Dual 30 V, 167 A, 1.0 mW General Description This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density. Features • Common Source Configuration to Eliminate PCB Routing • Large Source Pad on Bottom of Package for Enhanced Thermals • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A • Max rDS(on) = 1.3 mW at VGS = 4.
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