FDMD8540L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

Q1: N−Channel
* Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A
* Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N−Channel
* Max rDS(on) = 1.5 mW at VGS = 1.

Application

* POL Synchronous Dual
* One Phase Motor Half Bridge
* Half/Full Bridge Secondary Synchronous Rectification .

Description

This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features Q1: N−Channel
* Max rDS(o.

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