* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A
* Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID .

* DC−DC Conversion DATA SHEET www.onsemi.com VDS 60 V rDS(on) MAX 4.3 mW @ 10 V 6.5 mW @ 4.5 V ID MAX 87 A Pin .

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Exte.

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