FDMC86570L
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
