900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FDMC86570L Datasheet

MOSFET

No Preview Available !

March 2015
FDMC86570L
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 84 A, 4.3 mΩ
Features
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
„ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
„ DC-DC Conversion
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
SD
GD
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
60
±20
84
53
18
416
253
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86570L
Device
FDMC86570L
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. 1.2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMC86570L Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
60 V
30 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0 1.8 3.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-7 mV/°C
VGS = 10 V, ID = 18 A
3.1 4.3
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 15 A
4.7 6.5 mΩ
VGS = 10 V, ID = 18 A, TJ = 125 °C
5.0 6.9
gFS Forward Transconductance
VDD = 5 V, ID = 18 A
75 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
4790 6705 pF
821 1150 pF
19 30 pF
0.1 0.9 2.7 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 18 A
19 34 ns
6.2 12 ns
38 61 ns
3.9 10 ns
63 88 nC
29 41 nC
14 nC
6.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 18 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 18 A, di/dt = 100 A/μs
0.8 1.3
0.7 1.2
43 69
26 42
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
V
V
ns
nC
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 253 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 13 A, VDD = 60 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 43 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. 1.2
2
www.fairchildsemi.com


Part Number FDMC86570L
Description MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
PDF Download

FDMC86570L Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FDMC86570L MOSFET
Fairchild Semiconductor
2 FDMC86570LET60 MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy