FDMC8651 mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A
* Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested <.
* Synchronous rectifier
* 3.3 V input synchronous buck switch
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Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8.
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resi.
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