FDMC86570LET60 - MOSFET

Fairchild Semiconductor

FDMC86570LET60 Datasheet Preview — Preview of FDMC86570LET60 PDF

Datasheet Details

Part number	FDMC86570LET60
Manufacturer	Fairchild ↗ Semiconductor
File Size	201.85 KB
Description	MOSFET
Datasheet	FDMC86570LET60-FairchildSemiconductor.pdf

FDMC86570LET60 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion Pin 1 Pin 1 SS SG S S D D D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A.
Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A.
High performance technology for extremely low rDS(on).
Termination is Lead-free.
RoHS Compliant General.

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Published: Jan 10, 2017 |