Datasheet4U Logo Datasheet4U.com

FDMC86570LET60 - MOSFET

📥 Download Datasheet

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC Conversion P

Overview

FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.

Key Features

  • Extended TJ rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free.
  • RoHS Compliant General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDMC86570LET60 N-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDMC86570L MOSFET
FDMC8651 N-Channel Power Trench MOSFET
FDMC86520DC N-Channel Power Trench MOSFET
FDMC86520L N-Channel Power Trench MOSFET
FDMC86012 MOSFET
FDMC86102 N-Channel Power Trench MOSFET
FDMC86102L MOSFET
FDMC86102LZ N-Channel Power Trench MOSFET
FDMC86106LZ N-Channel Power Trench MOSFET
FDMC86116LZ MOSFET