| Description | This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A • High Performance Technolog... |
| Features |
• Shielded Gate MOSFET Technology • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A • High Performance Technology for Extremely Low rDS(on) • These Devices are Pb−Free and are RoHS Compliant Application • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter R... |
| Datasheet |
 FDMC86570L Datasheet - 529.14KB |
