FDMC7678 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 5.3 mW at VGS = 10 V, ID = 17.5 A
* Max rDS(on) = 6.8 mW at VGS = 4.5 V, ID = 15.0 A
* High Performance Technology for Extremely Low rDS(on) <.
common in Notebook Computers and Portable Battery Packs.
Features
* Max rDS(on) = 5.3 mW at VGS = 10 V, ID = 17.5 A .
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook C.
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