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FDMC7660DC - N-Channel Dual Cool 33 PowerTrenc MOSFET

Description

Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N

Features

  • General.

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FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET July 2015 FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 40 A, 2.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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