* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A
* Max rDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A
* High Performance Technology for Extremely Low rDS(on)
*.

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.

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