FDMC7660S syncfet equivalent, n-channel power trench syncfet.
* Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
* Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A
* High performance technology for extremely low rDS(on)
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Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining .
The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device h.
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