FDMC7664
Description
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
