Datasheet Details
| Part number | FDMC7664 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 381.29 KB |
| Description | N-Channel MOSFET |
| Download | FDMC7664 Download (PDF) |
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| Part number | FDMC7664 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 381.29 KB |
| Description | N-Channel MOSFET |
| Download | FDMC7664 Download (PDF) |
|
|
|
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3.3 D D D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 24 18.8 60 188 45 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.8 (Note 1a) 53 °C/W Device Marking FDMC7664 Device FDMC7664 Package MLP 3.3x3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation 1 FDMC7664 Rev.C4 www.fairchildsemi.com FDMC7664 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced
FDMC7664 N-Channel PowerTrench® MOSFET FDMC7664 N-Channel PowerTrench® MOSFET 30 V, 18.8 A, 4.
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