FDMC7664 Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FDMC7664 - N-Channel MOSFET

Datasheet Summary

Description

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor

Features

General.

Datasheet Details

Part number	FDMC7664
Manufacturer	Fairchild Semiconductor
File Size	381.29 KB
Description	N-Channel MOSFET
Datasheet	FDMC7664 Datasheet
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Full PDF Text Transcription

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FDMC7664 N-Channel PowerTrench® MOSFET FDMC7664 N-Channel PowerTrench® MOSFET 30 V, 18.8 A, 4.2 mΩ June 2014 Features General Description Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3.

Published: Oct 14, 2009 |