FDMC7672 Datasheet, ON Semiconductor

* Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A
* Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15.0 A
* High Performance Technology for Extremely Low RDS(on) <.

common in Notebook Computers and Portable Battery Packs. Features
* Max RDS(on) = 5.7 mW at VGS = 10 V, ID = 16.9 A .

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.