FDMC7672S mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 6.0 mW at VGS = 10 V, ID = 14.8 A
* Max RDS(on) = 7.1 mW at VGS = 4.5 V, ID = 12.4 A
* High Performance Technology for Extremely Low RDS(on) <.
common in Notebook Computers and Portable Battery packs.
Features
* Max RDS(on) = 6.0 mW at VGS = 10 V, ID = 14.8 A .
This FDMC7672S is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers.
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