FDMC6696P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A
* Max RDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A
* High Performance Trench Technology for Extremely Low R.

Application

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MAXIMUM RATINGS (TA.

Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features
* Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A
* Max RDS(on) = 16.4 mW at VG.

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