FDMC6688P Datasheet | onsemi

Description This P- Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features - Max RDS(on) = 6.5 m W at VGS = - 4.5 V, ID = - 14 A - Max RDS(on) = 9.8 m W at VGS = - 2.5 V, ID = - 11 A - Max RDS(on) = 20 m W at VGS = - 1.8 V, ID = - 9 A - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - This Device is Pb- Free, Halide Free and is Ro HS pliant Applications - Load Switch - Battery Management - Power Management - Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit Drain to Source Voltage VGS Gate to Source Voltage Drain Current - Continuous, TC = 25C - Continuous, TA = 25C (Note 1a) - Pulsed (Note 3) -...