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FDMC6688P - P-Channel MOSFET

FDMC6688P Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -56 A, 6.5 mW FDMC6688P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and r.

FDMC6688P Features

* Max RDS(on) = 6.5 mW at VGS =
* 4.5 V, ID =
* 14 A
* Max RDS(on) = 9.8 mW at VGS =
* 2.5 V, ID =
* 11 A
* Max RDS(on) = 20 mW at VGS =
* 1.8 V, ID =
* 9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and C

FDMC6688P Applications

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous, TC = 25

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