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FDMC6688P - P-Channel MOSFET

Description

This P

POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.

Features

  • Max RDS(on) = 6.5 mW at VGS =.
  • 4.5 V, ID =.
  • 14 A.
  • Max RDS(on) = 9.8 mW at VGS =.
  • 2.5 V, ID =.
  • 11 A.
  • Max RDS(on) = 20 mW at VGS =.
  • 1.8 V, ID =.
  • 9 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC6688P

Datasheet Details

Part number FDMC6688P
Manufacturer ON Semiconductor
File Size 410.91 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC6688P Datasheet
Additional preview pages of the FDMC6688P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -20 V, -56 A, 6.5 mW FDMC6688P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features  Max RDS(on) = 6.5 mW at VGS = −4.5 V, ID = −14 A  Max RDS(on) = 9.8 mW at VGS = −2.5 V, ID = −11 A  Max RDS(on) = 20 mW at VGS = −1.
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