FDMC6686P Datasheet Text
FDMC6686P P-Channel PowerTrench® MOSFET
February 2015
FDMC6686P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 4 mΩ
Features
General Description
- Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
- Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
- Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and RoHS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
Pin 1
Pin 1
S S SG
D DD D
S S S G
D D D D
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID...
