FDMC6688P Datasheet Text
FDMC6688P P-Channel PowerTrench® MOSFET
February 2015
FDMC6688P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 6.5 mΩ
Features
General Description
- Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
- Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
- Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and RoHS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
Pin 1
Pin 1
SS SG
S S
D D
DDDD
SD GD
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS...
