FDMC6688P Datasheet | onsemi

MOSFET - P-Channel, POWERTRENCH) -20 V, -56 A, 6.5 mW FDMC6688P General Description This P- Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features - Max RDS(on) = 6.5 mW at VGS = - 4.5 V, ID = - 14 A - Max RDS(on) = 9.8 mW at VGS = - 2.5 V, ID = - 11 A - Max RDS(on) = 20 mW at VGS = - 1.8 V, ID = - 9 A - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - This Device is Pb- Free, Halide Free and is RoHS pliant Applications - Load Switch - Battery Management - Power Management - Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit...