* Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A
* Max RDS(on) = 5.7 mW at VGS = −2.5 V, ID = −16 A
* Max RDS(on) =11.5 mW at VGS = −1.8 V, ID = −11 A
* H.

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MOSFET MAXIMUM RATI.

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features
* Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A
* Max RDS(on) = 5.7 mW at VGS =.

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