* Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
* Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
* HBM ESD protection level of 8 kV typical(note 3)

* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
.

The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Application
* Load Switch in Notebook and S.

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