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FDMC6675BZ - P-Channel MOSFET

Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Features

  • Max RDS(on) = 14.4 mW at VGS =.
  • 10 V, ID =.
  • 9.5 A.
  • Max RDS(on) = 27.0 mW at VGS =.
  • 4.5 V, ID =.
  • 6.9 A.
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • Extended VGSS Range (.
  • 25 V) for Battery.

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Datasheet preview – FDMC6675BZ

Datasheet Details

Part number FDMC6675BZ
Manufacturer onsemi
File Size 405.07 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC6675BZ Datasheet
Additional preview pages of the FDMC6675BZ datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection. Features • Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A • Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A • HBM ESD Protection Level of 8 kV Typical (Note 3) • Extended VGSS Range (−25 V) for Battery Applications • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Load Switch in Notebook and Server • Notebook Battery Pack Power Management DATA SHEET www.
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