FDMC6675BZ Key Features
- Max RDS(on) = 14.4 mW at VGS = -10 V, ID = -9.5 A
- Max RDS(on) = 27.0 mW at VGS = -4.5 V, ID = -6.9 A
- HBM ESD Protection Level of 8 kV Typical (Note 3)
- Extended VGSS Range (-25 V) for Battery
- Part: FDMC6675BZ
- Description: P-Channel MOSFET
- Manufacturer: onsemi
- Size: 405.07 KB
Other FDMC6675BZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDMC6675BZ | N-Channel MOSFET |