FDMC6675BZ mosfet equivalent, p-channel mosfet.
* Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A
* Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A
* HBM ESD Protection Level of 8 kV Typical (Note 3) <.
Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
Features
* Max RDS(on) = 14.4 mW at VGS = −1.
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