FDMC4D9P20X8 mosfet equivalent, p-channel power mosfet.
* Max rDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A
* Max rDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A
* High Performance Trench Technology for Extremely Low r.
* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection
MAXIMUM RATINGS (TA.
This P−Channel MOSFET is produced using ON Semiconductor’s
advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
* Max rDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A
* Max rDS(on) = 16.
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