| Description | This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 25 mW at VGS = 6 V, ... |
| Features |
• Shielded Gate MOSFET Technology • Max RDS(on) = 10 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 25 mW at VGS = 6 V, ID = 8 A • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • MSL1 Robust Package Design • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant Application • Primary DC−DC MOSFET • Synchr... |
| Datasheet |
 FDMC010N08C Datasheet - 564.42KB |
