* Shielded Gate MOSFET Technology
* Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A
* Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A
* 50% Lower Qrr Than Oth.

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar MOSFET MAXIMUM .

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in .

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