FDMC4435BZ-F127 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A
* Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.3 A
* Extended VGSS Range (−25 V) for Battery Applications

Application

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A .

Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.

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