FDMC2D8N025S datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

General Description
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
* High Performance Technology for Extre.

Application

* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore/ GPU Low Side Switch
* Networking Point of L.

Description

* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
* High Performance Technology for Extremely Low rDS(on)
* SyncFETTM Schottky Body Diode
* 100% UIL Tested
* RoHS Compliant The .

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