FDMC2610 mosfet equivalent, n-channel ultrafet trench mosfet.
General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management .
* Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
* Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
* Low Profile - .
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