FDMA86108LZ mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 A
* Max rDS(on) = 366 mW at VGS = 4.5 V, ID = 1.8 A
* Low Profile − 0.8 mm Maximum in the New Package MicroFETt.
This device has been designed to provide maximum efficiency and
thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Features
* Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 .
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