* Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
* Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
* Low Profile - 0.8 mm maximum in the new package MicroFET 2x.

as well as load switch applications
* 100% UIL tested
* RoHS Compliant General Description This P-Channel MOSFE.

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Applications
* Active Clamp Switch
* Load Swi.

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