FDMA86265P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMA86265P Key Features
- Max rDS(on) = 1.2 mW at VGS = -10 V, ID = -1 A
- Max rDS(on) = 1.4 mW at VGS = -6 V, ID = -0.9 A
- Low Profile
- 0.8 mm Maximum in the New Package MicroFETt
- Very Low RDS-on Mid Voltage P-channel Silicon Technology
- This Product is Optimised for Fast Switching