General Description Max rDS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A Max rDS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package Micro.

Max rDS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A Max rDS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package MicroFET 2x2 mm Free from Halogenated Compounds and Antimony Oxides RoHS Compliant This device has been d.

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