General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.5 A
* Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6 A
* Low Profile - 0.8 mm maximum in the new.

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.5 A
* Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6 A
* Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
* Free from halogenated compounds and antimony oxides
* RoHS Complia.

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