FDG8842CZ mosfet equivalent, mosfet.
Q1: N-Channel
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
* Max rDS(on) = 1.1Ω at VGS =
&n.
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. Th.
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